Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication
Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication
复制标题
DOI：
10.1016/0924-4247(96)80090-2
复制
发表时间：
1995-08-01
影响因子：
4.6
通讯作者：
Oguchi, T
中科院分区：
文献类型：
--
作者：
Ohwada, K;Negoro, Y;Oguchi, T
本文研究了在（110）Si各向异性腐蚀中利用超声波获得均匀槽深的方法。使用其频率以很短的间隔在三个频率之间切换的动态冲击型超声波，可以成功地形成具有均匀深度的凹槽，其宽度为1-20 μ m，与图案宽度和图案间距无关。该工艺已应用于梳状窄间隙电极加速度计的制作。尽管梳状电极具有不同的图案宽度和图案间距，但可以均匀地形成具有3.0 μ m的最小间隙和58 μ m的高度的梳状电极。该器件的电容对39 pF g（-1）的加速度具有高灵敏度。通过将其与输出CV转换器和放大器相结合，我们已经生产出在0至+2g的加速度范围内具有0.63%的良好满量程线性度的传感器。
The use of ultrasonic waves to obtain uniform groove depth in (110) Si anisotropic etching has been studied. Using dynashock-type ultrasonic waves, the frequency of which is switched between three frequencies at very short intervals, grooves with uniform depth can be successfully formed with widths of 1-20 mu m independently of pattern width and pattern spacing. This technology is applied to the fabrication of an accelerometer with comb-type narrow-gap electrodes. Comb electrodes with a minimum gap of 3.0 mu m and a height of 58 mu m can be formed uniformly, although they have different pattern widths and pattern spacings. The capacitance of this device has a high sensitivity to acceleration of 39 pF g(-1). By combining it with an output CV converter and amplifiers, we have produced a sensor with good full-scale linearity of 0.63% over the acceleration range 0 to + 2g.