The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films
The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films
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延长热处理对镍诱导非晶硅薄膜横向结晶的影响
DOI：
10.1109/16.737444
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发表时间：
1999
影响因子：
3.1
通讯作者：
M. Wong
中科院分区：
文献类型：
--
作者：
Zhonghe Jin;Keith Moulding;H. Kwok;M. Wong
研究了延长热处理时间对非晶硅金属诱导横向晶化速率的影响。取向图像显微镜和透射电子显微镜来揭示薄膜的结晶度和测量MILC长度。结果发现，对于圆形Ni盘图案，所得MILC环的径向尺寸随着Ni盘的半径而增加。最长的MILC长度是从直边Ni图案获得的，其有效地具有无限的曲率半径。延长热处理时间后，MILC率下降。一个原因是在处理过程中a-Si的状态不断变化。另一个原因可能是镍覆盖区的镍供应减少。两者的贡献减少的MILC率进行了讨论。
The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.