Many-body effects on modulation-doped InAs/GaAs quantum dots
Many-body effects on modulation-doped InAs/GaAs quantum dots
复制标题
DOI：
10.1063/1.119031
复制
发表时间：
1997-05
影响因子：
4
通讯作者：
J. Lee;H. Lee;E. Shin;Sungkyu Yu;Dongho Kim;G. Ihm
中科院分区：
文献类型：
--
作者：
J. Lee;H. Lee;E. Shin;Sungkyu Yu;Dongho Kim;G. Ihm
不同调制掺杂的InAs/GaAs量子点的激发强度相关光致发光光谱表现为带填充和带隙重整化。从时间分辨光致发光光谱来看，除了量子点中的载流子与GaAs势垒中的远离子化杂质的相互作用外，由于二维电荷的筛选主要影响了调制掺杂量子点中的载流子寿命。
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.