Evolution map of the memristor: from pure capacitive state to resistive switching state
Evolution map of the memristor: from pure capacitive state to resistive switching state
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忆阻器的演变图：从纯电容状态到电阻开关状态
DOI：
10.1039/c9nr05550a
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发表时间：
2019
期刊：
影响因子：
6.7
通讯作者：
Song Qunliang
中科院分区：
文献类型：
--
作者：
Zhou Guangdong;Wu Jinggao;Wang Lidan;Sun Bai;Ren Zhijun;Xu Cunyun;Yao Yanqing;Liao Liping;Wang Gang;Zheng Shaohui;Mazumder Pinaki;Duan Shukai;Song Qunliang
忆阻器在太比特非易失性存储器件、逻辑记忆算法芯片和仿生人工神经网络系统中具有广阔的应用前景。然而，“忆阻器的起源状态是什么？”半个世纪来一直是个未解之谜。虽然许多应用依赖于忆阻器，但其原始状态正成为一个基本问题。在这里，我们揭示了一个新的状态，纯电容状态（PCS），它发生在忆阻器被触发之前，并且忆阻器的原始状态可以通过控制环境参数在存储单元中被验证。PCS是忆阻器的一个缺失的早期阶段，它的发现完成了忆阻器从最开始到最终发展状态的整个进化图。
Memristors possess great application prospects in terabit nonvolatile storage devices, memory-in-logic algorithmic chips and bio-inspired artificial neural network systems. However, “what is the origin state of the memristor?” has remained an unanswered question for half a century. While many applications rely on the memristor, its origin state is becoming a fundamental issue. Herein, we reveal a new state, the pure capacitance state (PCS), which occurs before the memristor is triggered, and the origin state of the memristor can be verified in the memory cells through controlling the ambience parameters. Discovery of the PCS, a missing earlier stage of the memristor, completes the whole evolution map of the memristor from the very beginning to the final developed state.