Positive ArF resist with 2EAdMA/GBLMA resin system
Positive ArF resist with 2EAdMA/GBLMA resin system
复制标题
采用 2EAdMA/GBLMA 树脂系统的正性 ArF 抗蚀剂
DOI：
10.1117/12.350233
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
I. Takemoto
中科院分区：
文献类型：
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作者：
Y. Uetani;Hiroaki Fujishima;K. Araki;K. Endo;I. Takemoto
比较了2 MAdMA（2-甲基-2-金刚烷基甲基丙烯酸酯）/GBLMA（（γ）-丁内酯甲基丙烯酸酯）树脂体系和2 EAdMA（2-乙基-2-金刚烷基甲基丙烯酸酯）/GBLMA树脂体系。与2 MAdMA/GBLMA树脂体系相比，2 EAdMA/GBLMA树脂体系具有更高的灵敏度、溶解反差和更好的对硅基底的粘附性。结果表明，2 EAdMA/GBLMA树脂体系适合于制作实用的ArF正性抗蚀剂。
We compared 2MAdMA(2-Metyl-2- Adamantylmethacrylate)/GBLMA((gamma) -butyrolactone methacrylate) resin system and 2EAdMA(2-Etyl-2- Adamantylmethacrylate)/GBLMA resin system. 2EAdMA/GBLMA resin system showed higher sensitivity, dissolution contrast and better adhesion to silicon substrate than 2MAdMA/GBLMA resin system. These results shows that 2EAdMA/GBLMA resin system is suitable for practical ArF positive resist.