Electron emission from ferroelectric thin films enhanced by the presence of 90° ferroelectric domains
Electron emission from ferroelectric thin films enhanced by the presence of 90° ferroelectric domains
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90° 铁电畴的存在增强了铁电薄膜的电子发射
DOI：
10.1109/tuffc.2007.576
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
G. Gerlach
中科院分区：
文献类型：
--
作者：
O. Mieth;H. Klumbies;T. Otto;L.M. Eng;G. Milde;G. Suchaneck;V. Vidyarthi;G. Gerlach
在这项工作中，铁电畴增强的电子发射机制提出。通过求解一组二阶微分方程，包括Poisson方程和根据Devonshire-Landau-Ginzburg理论将自由能Phi（P）展开成极化的幂级数的方程，计算了90度畴壁附近的极化分布。与发射表面相交的畴壁产生足够的电场并降低电子发射的势垒。这诱导了增强的电子发射中心。弛豫畴壁被发现激发被困在前面的墙多余的电子。
In this work, a ferroelectric domain-enhanced electron emission mechanism is proposed. The polarization distribution near 90deg domain walls is calculated by solving a set of second order differential equations, including the Poisson's one and equations derived from an expansion of the free energy Phi(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excite trapped excess electrons in front of the wall.