Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.
Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.
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DOI：
10.1021/acs.nanolett.5b03515
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发表时间：
2015-09
期刊：
影响因子：
10.8
通讯作者：
J. Zhang;H. Ishiwata;T. Babinec;M. Radulaski;K. Müller;K. Lagoudakis;C. Dory;J. Dahl;Robert J Edgington;V. Souliere;G. Ferro;A. Fokin;P. Schreiner;Z. Shen;N. Melosh;J. Vučković
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作者：
J. Zhang;H. Ishiwata;T. Babinec;M. Radulaski;K. Müller;K. Lagoudakis;C. Dory;J. Dahl;Robert J Edgington;V. Souliere;G. Ferro;A. Fokin;P. Schreiner;Z. Shen;N. Melosh;J. Vučković
我们展示了一种新的方法，用于工程IV族基于量子光子结构，其中含有带负电荷的硅空位（SiV（-））色中心的金刚石作为量子发射体。混合金刚石-SiC结构是通过将纳米金刚石和微米金刚石在碳化硅（3C或4 H多型体）衬底上的生长与随后使用这些金刚石晶体作为图案转移的硬掩模相结合来实现的。SiV（-）色心在金刚石的合成过程中从分子金刚石种子（类金刚石）中并入金刚石中，不需要离子注入或退火。我们表明，相同的生长技术可以用于生长可控掺杂SiV（-）的高纯度块状金刚石，其中我们随后制造纳米柱阵列含有高品质的SiV（-）中心的顶部上的金刚石层。扫描共聚焦光致发光测量揭示了所有制造结构在室温和低温（5 K）下的光学活性SiV（-）线，特别是来自全金刚石纳米柱阵列的SiV（-）线的非常窄的线宽和小的不均匀加宽，这是量子计算的关键要求。在低温下（5 K），我们观察到在这些结构中的签名典型的SiV（-）中心在散装金刚石，符合双λ。这些结果表明，高品质的色心可以被纳入纳米光子结构合成与那些在散装金刚石的性能相当，从而打开经典和量子信息处理的应用机会。
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.