Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects
Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects
复制标题
掺铬莫特绝缘体 Ca2RuO4 中的无损可逆电阻切换：界面效应与体效应
DOI：
10.1063/1.5008650
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发表时间：
2017
影响因子：
3.2
通讯作者：
M. Tsoi
中科院分区：
文献类型：
--
作者：
Shida Shen;Morgan C. Williamson;G. Cao;Jianshi Zhou;J. Goodenough;M. Tsoi
一个非破坏性的可逆电阻开关表现在单晶的Cr掺杂的莫特绝缘体Ca 2 RuO 4。所施加的电偏置被示出为减少多达75%的晶体的直流电阻。通过施加相反极性的电偏压可以恢复样品的原始电阻。我们已经研究了这种电阻开关作为偏置强度，施加的磁场和温度的函数。2-，3-，和4-探针测量的组合提供了一种手段来区分散装和界面的开关的贡献，并建议开关主要是一个界面效应。开关暂时归因于电场驱动的晶格畸变伴随着杂质诱导的莫特转变。这种场效应证实了温度依赖性的电阻率测量表明，该材料的活化能可以通过施加的直流电偏压进行调谐。所观察到的电阻切换可以有效地…
A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potent...