Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters
Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters
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DOI：
10.1364/oe.22.003234
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发表时间：
2014-02-10
期刊：
影响因子：
3.8
通讯作者：
Apostolopoulos, V.
中科院分区：
文献类型：
--
作者：
McBryde, D.;Barnes, M. E.;Apostolopoulos, V.
本文研究了半绝缘、退火和未退火低温生长GaAs横向光致发射极的THz输出特性。观察到太赫兹脉冲功率随光通量的饱和，未退火的LTG GaAs在1.1 +/- 0.1 mJ cm（-2）处显示出最高的饱和通量。SI-GaAs LPD发射器显示出信号极性的翻转，其光通量归因于来自金属-半导体接触的THz发射。光学偏振的变化影响太赫兹脉冲功率，这归因于金属接触附近的局部光学激发。(C)2014年美国光学学会
We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 +/- 0.1 mJ cm(-2). SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact. (C) 2014 Optical Society of America