Analysis of Thin Films by Interferometric Ellipsometry
Analysis of Thin Films by Interferometric Ellipsometry
复制标题
通过干涉椭圆光度法分析薄膜
DOI：
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发表时间：
1974
期刊：
影响因子：
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通讯作者：
A. Holscher
中科院分区：
文献类型：
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作者：
H. F. Hazebroek;A. Holscher
介绍了一种用于薄膜椭偏分析的新型光电系统。基于干涉原理，该仪器可实现精确（σΔ=0.25°和σ θ =0.05°）和快速（低至5 ms）测量。光谱学的应用似乎很有前途，因为避免了使用彩色光学元件。绝对参考的可用性排除了由于超高真空实验中使用的测量单元的组件和窗口的缺陷而导致的系统误差的可能性。
A novel opto-electronic system for the ellipsometric analysis of thin films is described. Based on interferometric principles, the instrument permits accurate (σΔ=0.25° and σψ=0.05°) and fast (down to 5 ms) measurements. Spectroscopic applications seem promising, because the use of chromatic optical components has been avoided. The availability of an absolute reference rules out the possibility of systematic errors due to imperfections of components and of the window of the measuring cell used in ultra-high vacuum experiments.