Non-destructive depth-resolved characterization of residual strain fields in high electron mobility transistors using differential aperture x-ray microscopy
Non-destructive depth-resolved characterization of residual strain fields in high electron mobility transistors using differential aperture x-ray microscopy
复制标题
DOI：
10.1063/5.0109606
复制
发表时间：
2022-07
影响因子：
3.2
通讯作者：
D. Pagan;M. Rasel;R. E. Lim;D. Sheyfer;Wenjun Liu;A. Haque
中科院分区：
文献类型：
--
作者：
D. Pagan;M. Rasel;R. E. Lim;D. Sheyfer;Wenjun Liu;A. Haque
微电子器件中的局部残余应力和弹性应变集中通常会影响电子性能、对热机械损伤的抵抗力以及可能的辐射耐受性。表征这些浓度的主要挑战是它们存在于子[公式：见正文]m的长度尺度上，排除了通过更传统的残余应力测量技术对其进行表征。在这里，我们展示了使用同步辐射X射线为基础的差分孔径X射线显微镜（DAXM）作为一个可行的，非破坏性的手段来表征这些应力和应变集中的深度分辨的方式。DAXM用于绘制高电子迁移率晶体管（HEMT）中氮化镓（GaN）层中源极和漏极之间的二维应变场，空间分辨率为sub-[Formula：see text]m。应变场在不同的位置在原始的和辐照的HEMT试样，除了初步的应力分析，以估计GaN层内的各种应力分量的分布。【配方：发现辐照显著地减小了GaN中沿沿着样品法线方向的晶格面间距，这归因于在辐照期间结合到GaN的晶体管部件中的辐射损伤。
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for the characterization of these concentrations is that they exist over sub-[Formula: see text]m length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here, we demonstrate the use of synchrotron x-ray-based differential aperture x-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between the source and the drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-[Formula: see text]m spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. [Formula: see text]-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction, which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.