Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
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DOI：
10.1016/j.jcrysgro.2007.11.206
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发表时间：
2008-04-01
影响因子：
1.8
通讯作者：
Bandoh, Akira
中科院分区：
文献类型：
--
作者：
Imura, Masataka;Sugimura, Hiroki;Bandoh, Akira
研究了金属有机气相外延高温生长对6H-SiC(0 0 0 1)(Si)衬底上生长的AlN晶体质量的影响。随着生长温度(T-g)的升高，生长速度变快，残留杂质减少。当T-g=1600℃时，在6µm/h的高生长速率下，获得了表面原子平坦、位错密度低的AlN，最窄的倾斜和扭转分布分别为76和360弧秒，平均位错密度为7×10(8)cm(-2)。大部分位错是由于AlN和碳化硅衬底之间的失配而产生的刃型位错。当Tg增加到1600℃时，AlN/SiC界面上的位错数目减少，许多位错被形成环状结构所湮没。(C)2007 Elsevier B.V.保留所有权利。
We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0 0 0 1)(Si) substrate. With increasing growth temperature (T-g), growth rate became high and residual impurities decreased. For T-g = 1600 degrees C, AlN with atomically flat surface and low dislocation density were reproducibly obtained under the high growth rate at 6 mu m/h. The narrowest distribution of tilt and twist were 76 and 360 arcsec, respectively, and the average dislocation density was measured to be 7 x 10(8) cm(-2). Most of dislocations were of edge-type, generated by the misfit between the AlN and the SiC substrate. For increases of Tg up to 1600 degrees C, the number of dislocations at AlN/SiC interface decreased, and many of the dislocations were annihilated by the formation of a loop structure. (C) 2007 Elsevier B.V. All rights reserved.