A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design
A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design
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DOI：
10.1587/elex.7.1785
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
D. Yamane;Winston Sun;S. Kawasaki;H. Fujita;H. Toshiyoshi
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文献类型：
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作者：
D. Yamane;Winston Sun;S. Kawasaki;H. Fujita;H. Toshiyoshi
提出了一种基于机械可动开关线波导的Ku波段单片RF-MEMS移相器的设计方案。通过利用SOI（silicon on insulator）晶片的两面和SOI层分离技术，将微波波导和MEMS致动器分别布置在SOI的处理晶片和有源层上，对MEMS致动器、开关触点和MEMS共面波导的结构进行了插入损耗优化。在研制的1位MEMS移相器上进行了射频性能测试，在12.5GHz频率下，插入损耗为-1.64 ~-1.82dB/bit，回波损耗为-8.92 ~-12.60dB/bit，隔离度为-40.29dB/bit。在12.5GHz频率下，22.5 °移相器的相位误差为5.5 °/bit。
A novel design of monolithic RF-MEMS (radio frequency micro electro mechanical systems) phase shifter for Ku-band has been successfully developed based on a mechanically movable switched-line waveguide. The structures of MEMS actuators, switch contacts, and MEMS coplanar waveguides have been optimized in terms of insertion loss by utilizing the both sides of an SOI (silicon on insulator) wafer and by using the SOI layer-separation technique, where microwave waveguides and actuators are allocated on the handle wafer and the active layer of SOI, respectively. RF performance was measured on a developed 1-bit MEMS phase shifter, and we obtained insertion loss of -1.64 to -1.82dB/bit, return loss of -8.92 to -12.60dB/bit, and isolation of -40.29dB/bit at 12.5GHz. Phase-error for the 22.5-degree phase shifter was found to be 5.5degree/bit at 12.5GHz.