Dependence of electric properties of a nanogap junction on electrode material
Dependence of electric properties of a nanogap junction on electrode material
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DOI：
10.1143/jjap.47.1806
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发表时间：
2008-03-01
影响因子：
1.5
通讯作者：
Ono, Masatoshi
中科院分区：
文献类型：
--
作者：
Furuta, Shigeo;Takahashi, Tsuyoshi;Ono, Masatoshi
采用倾斜沉积法在 SiO(2) 基板上制备两个间隙小于 10 nm 的金属电极。通过扫描这些电极之间的电压，在真空中观察到数位数的负电阻变化。在这项工作中，制造了由 Au、Pd、Pt 和 Ta 制成的电极，并在真空中测量了它们的电性能。所有四种金属均观察到负电阻。测量结果清楚地显示了最小电阻时的电压与熔点之间的相关性。此外，计算出的温升显示出与熔点的相关性。这些事实支持电极金属的热变化对纳米间隙开关（NGS）的电性能有相当大的影响。
Oblique deposition was used to fabricate two metal electrodes separated by a gap of less than 10 nm on a SiO(2) substrate. By sweeping voltage between these electrodes, a negative resistance change of several digits was observed in vacuum. In this work, electrodes made of Au, Pd, Pt, and Ta were fabricated, and their electric properties were measured in vacuum. The negative resistance was observed for all of the four metals. The result of the measurements clearly shows the correlation between the voltage at the minimum resistance and the melting point. Also, the calculated temperature rise shows a correlation with the melting point. These facts support the effect that the thermal change of the electrode metal has a considerable effect on the electric properties of the nanogap switch (NGS).