Controllable laser‐induced periodic structures at silicon–dioxide/silicon interface by excimer laser irradiation
Controllable laser‐induced periodic structures at silicon–dioxide/silicon interface by excimer laser irradiation
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DOI：
10.1063/1.363779
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发表时间：
1996-12
影响因子：
3.2
通讯作者：
Y. Lu;W. Choi;Y. Aoyagi;A. Kinomura;K. Fujii
中科院分区：
文献类型：
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作者：
Y. Lu;W. Choi;Y. Aoyagi;A. Kinomura;K. Fujii
采用KrF准分子激光辐照控制了覆盖有二氧化硅薄层的硅衬底中激光诱导的周期性微观结构。研究发现，当SiO2厚度较小时，KrF准分子激光单脉冲照射可在SiO2/Si样品中产生周期性的微观结构。当SiO2层较厚且需要多个激光脉冲时，由于界面缺陷，可以观察到圆形图案。波纹结构的周期性与SiO2厚度呈线性关系。微观结构的形成不会改变SiO2层的厚度和Si衬底的结晶度。SiO2/Si结构中波纹结构的形成与热生成的表面波有关。在Si衬底上存在SiO2层可以改变Si界面熔化过程中的表面张力，从而控制纹波形成的周期性。侧面p…
Laser‐induced periodical microstructure in a Si substrate covered with a thin layer of silicon dioxide has been studied using KrF excimer laser irradiation for controlling the periodicity. It was found that KrF excimer laser irradiation can produce periodical microstructures in SiO2/Si samples by a single pulse if the laser fluence is large enough when the SiO2 thickness is small. When the SiO2 layer is thick and more than one laser pulse is required, circular patterns can be observed due to the interface defects. The periodicity of the ripple structure linearly depends on the SiO2 thickness. The formation of microstructure does not change the thickness of the SiO2 layer and the crystallinity in the Si substrate. The ripple structure formation in the SiO2/Si structure is related to the thermally generated surface waves. The existence of a SiO2 layer on Si substrate can change the surface tension during the melting of the Si interface and hence control the periodicity of the ripple formation. The lateral p...