Metal contacts in carbon nanotube field-effect transistors: Beyond the Schottky barrier paradigm
Metal contacts in carbon nanotube field-effect transistors: Beyond the Schottky barrier paradigm
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DOI：
10.1103/physrevb.77.113403
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发表时间：
2007-05
影响因子：
3.7
通讯作者：
J. Palacios;P. Tarakeshwar;D. Kim
中科院分区：
文献类型：
--
作者：
J. Palacios;P. Tarakeshwar;D. Kim
Received 11 October 2007; revised manuscript received 8 November 2007; published 12 March 2008The observed performances of carbon nanotube field-effect transistors are examined using first-principlesquantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pdelectrodes to open-ended semiconducting nanotubes, allowing the chemical contact at the surface to fullydevelop through large-scale relaxation of the contacting atomic configuration. As expected from their respec-tive work functions, the Schottky barrier heights forAu and Pd turn out to be fairly similar for realistic contactmodels. We present, however, direct numerical evidence of Pd contacts exhibiting perfect transparency for holeinjection as opposed to that of Au contacts. These findings support experimental data reported to date.DOI: 10.1103/PhysRevB.77.113403 PACS number s : 73.63.Fg, 73.40.Sx
