Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy
Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy
复制标题
氮等离子体功率对分子束外延生长的 Ni/n-GaN 肖特基二极管缺陷水平的影响
DOI：
10.1063/1.3309778
复制
发表时间：
2010
影响因子：
3.2
通讯作者：
S. Ringel
中科院分区：
文献类型：
--
作者：
A. Arehart;C. Poblenz;J. Speck;S. Ringel
采用等离子体辅助分子束外延生长的n型GaN中的深能级缺陷进行了研究，通过系统的调整，从150至400 W的氮等离子体源功率，同时保持恒定的V/III束通量比。深能级光学光谱和传统的热深能级瞬态光谱测量，这两者一起使整个GaN带隙的深能级检测，揭示了几个深层次的浓度，强烈依赖于射频等离子体功率。镓空位深能级在EC-2.60 eV和碳相关的点缺陷与EC-3.28和EC-1.35 eV的能级的浓度被发现是非常敏感的氮源功率，增加了高达50倍的等离子体功率从150到400 W的相应增加。 这些陷阱和等离子体功率的浓度之间的关系如下Arrhenius型的行为，并提示与构成活性氮物种的能量学等离子体损伤…
The incorporation of deep level defects in n-type GaN grown by plasma assisted molecular beam epitaxy was studied via systematic adjustment of the nitrogen plasma source power from 150 to 400 W while maintaining a constant V/III beam flux ratio. Deep level optical spectroscopy and conventional thermal deep level transient spectroscopy measurements, which together enable deep level detection throughout the GaN band gap, revealed several deep level concentrations that depend strongly on rf-plasma power. The concentrations of the gallium vacancy deep level at EC-2.60 eV and carbon-related point defects with energy levels at EC-3.28 and EC-1.35 eV are found to be very sensitive to the nitrogen source power, increasing by up to 50 times for a corresponding increase in plasma power from 150 to 400 W. The relation between the concentrations of these traps and plasma power follows an Arrhenius-type behavior and is suggestive of plasma damage associated with the energetics of the constituent active nitrogen specie...