Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films
Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films
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DOI：
10.1063/1.1569431
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发表时间：
2003-05
影响因子：
3.2
通讯作者：
M. Kelman;P. McIntyre;B. Hendrix;S. Bilodeau;J. Roeder
中科院分区：
文献类型：
--
作者：
M. Kelman;P. McIntyre;B. Hendrix;S. Bilodeau;J. Roeder
采用金属有机化学气相沉积法制备了厚度为700 ~ 4000 A的Pb(Zr0.35Ti0.65)O3 （PZT）薄膜，设计了一种弯曲晶圆的方法对其施加双轴应变。研究了PZT薄膜在双轴拉伸下的铁电性能和介电性能。结果表明，0.08%的双轴应变可使PZT薄膜的剩余极化率可逆地降低12 ~ 14%。在明显大于开关电压的电压下测量的小信号电容随着双轴张力的增加而增加。这些观察结果提供了PZT薄膜室温应变调节的明确证据，通过可逆的90°畴壁运动，改变了在电气测试中切换的薄膜的体积分数。
A wafer bending method has been devised to impose biaxial strains on Pb(Zr0.35Ti0.65)O3 (PZT) thin films ranging in thickness from 700 to 4000 A grown by metal-organic chemical vapor deposition. The ferroelectric and dielectric properties of PZT capacitors were investigated while the film was placed under biaxial tension. It was observed that biaxial strains as small as 0.08% can reversibly reduce the remanent polarization of PZT films by 12 to 14% for all film thicknesses. The small-signal capacitance measured at voltages significantly larger than the switching voltage increased with increasing biaxial tension. These observations present clear evidence of room temperature strain accommodation in PZT thin films by reversible 90° domain wall motion that changes the volume fraction of the film that switches during electrical testing.