A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode
A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode
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DOI：
10.1109/lpt.2014.2361202
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发表时间：
2015
影响因子：
2.6
通讯作者：
Bin Li;Qianqian Lv;Rong Cui;Weihong Yin;Xiaohong Yang;Q. Han
中科院分区：
文献类型：
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作者：
Bin Li;Qianqian Lv;Rong Cui;Weihong Yin;Xiaohong Yang;Q. Han
提出了一种顶照式三台面型InGaAs/InAlAs雪崩光电二极管，它采用了吸收、分级、电荷和倍增分离的结构，梅萨大于P接触梅萨，减小了表面电场，同时实现了平面型器件的低暗电流和梅萨型器件的制作简单性和可重复性。在1.55 μm处获得了0.77 A/W（M = 1，无AR）的高响应度和大于100的高倍增增益，而在0.9 Vb处的暗电流在室温下低至6 nA（有源区直径为55 μm）。分析表明，该结构器件的暗电流主要由表面漏电流组成，与相同有源区尺寸的典型梅萨结构器件相比，暗电流明显减小，而电容与典型梅萨结构器件相近。
A top-illuminated three-mesa-type InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiode with a mesa larger than P contact mesa to reduce surface electric field, which achieves simultaneously the low dark current of planar type device and fabrication-simplicity and reproducibility of the mesa type one, is demonstrated. A high responsivity of 0.77 A/W (M = 1, without AR) at 1.55 μm and high multiplication gain of more than 100 is achieved, whereas the dark current at 0.9 Vb is as low as 6 nA at room temperature (with 55-μm active region diameter). The dark current of devices of this structure is analyzed and proved to be mainly composed of surface leakage current and is significantly reduced compared with typical mesa structure devices with the same active region size while the capacitance is similar to that of typical mesa structure devices.