Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit
Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit
复制标题
将纳米机电 (NEM) 继电器与具有功能 CMOS-NEM 电路的硅 CMOS 集成
DOI：
10.1109/iedm.2011.6131645
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Wong
中科院分区：
文献类型：
--
作者：
S. Chong;Byoungil Lee;K. B. Parizi;J. Provine;S. Mitra;R. Howe;H. Wong
本文演示了集成硅CMOS静电驱动纳机电（NEM）继电器电路的电气结果。这是实现先前提出的NEM-CMOS混合电路的第一步，与纯CMOS电路相比，NEM-CMOS混合电路具有各种优势。在这项工作中，电子束图案化的横向致动Pt NEM继电器在CMOS兼容的温度（≤ 400 °C）的CMOS顶部制造，并由片上CMOS反相器在VDD = 6 V驱动。
This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at VDD = 6 V.