N-Doping of Graphene Through Electrothermal Reactions with Ammonia
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
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DOI：
10.1126/science.1170335
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发表时间：
2009-05-08
期刊：
影响因子：
56.9
通讯作者：
Dai, Hongjie
中科院分区：
文献类型：
--
作者：
Wang, Xinran;Li, Xiaolin;Dai, Hongjie
石墨烯容易被吸附物P掺杂，但对于器件应用，获得η掺杂材料将是有用的。单个石墨烯纳米带通过氨气中的高功率电焦耳加热被氮物种共价官能化，导致与理论一致的n型电子掺杂。碳-氮键的形成应该主要发生在化学反应性高的石墨烯边缘。X射线光电子能谱和纳米级二次离子质谱证实了在氨中热退火的石墨烯中的碳-氮物种。我们制作了一个在室温下工作的n型石墨烯场效应晶体管。
Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic doping consistent with theory. The formation of the carbon-nitrogen bond should occur mostly at the edges of graphene where chemical reactivity is high. X-ray photoelectron spectroscopy and nanometer-scale secondary ion mass spectroscopy confirm the carbon-nitrogen species in graphene thermally annealed in ammonia. We fabricated an n-type graphene field-effect transistor that operates at room temperature.