Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors
Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors
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碳浓度对 SiGe:C 异质结双极晶体管中 1∕f 噪声和随机电报信号噪声的影响
DOI：
10.1063/1.2939252
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发表时间：
2008
影响因子：
3.2
通讯作者：
M. Deen
中科院分区：
文献类型：
--
作者：
J. Raoult;F. Pascal;C. Delseny;M. Marin;M. Deen
研究了碳浓度对Si / SiGe:C / Si异质结双极晶体管低频噪声（LF噪声）的影响。当这些hbt中加入碳时，输入电流谱密度SIB的代表性噪声谱显示出显著的生成复合（GR）成分。另一方面，对于没有掺杂碳的晶体管，没有观察到GR成分。当只观察到1∕f噪声分量时，发现1∕f噪声电平与碳浓度无关，并且相关的归一化噪声量级KB的优值非常好，为4×10−10μm2。为了将1 / f噪声与晶体管的高频性能联系起来，我们研究并建模了定义为fc / fT比率的品质图（fc为低频角频率，fT为单位电流增益频率）。然后，我们对与碳的存在相关的GR组分进行了详细的分析。我们发现观察到……
The influence of carbon concentration on the low-frequency noise (LF noise) of Si∕SiGe:C∕Si heterojunction bipolar transistors (HBTs) is investigated. When carbon is incorporated into these HBTs, representative noise spectra of the input current spectral density SIB show significant generation-recombination (GR) components. On the other hand, for transistors without carbon incorporation, no GR components were observed. When only 1∕f noise component is observed, the 1∕f noise level is found to be independent of the carbon concentration and the associated figure of merit of the normalized noise magnitude KB has a very good value of ∼4×10−10μm2. In order to relate the 1∕f noise and the high-frequency performance of the transistor, we studied and modeled the figure of merit defined as the ratio fc∕fT (fc is the low-frequency corner frequency and fT the unity current-gain frequency). Then we performed a detailed analysis of the GR components associated with the presence of the carbon. We found that the observe...