Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and gamma-ray spectroscopy
Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and gamma-ray spectroscopy
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DOI：
10.1016/s0168-9002(96)00474-3
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发表时间：
1996-10-01
影响因子：
1.4
通讯作者：
DeGeronimo, G
中科院分区：
文献类型：
--
作者：
Bertuccio, G;Pullia, A;DeGeronimo, G
我们分析了电子噪声的贡献，它限制了使用半导体探测器的X射线和伽马能谱仪的分辨率，这些探测器工作在室温和亚微秒范围内的信号处理时间。与达到最高分辨率相关的前端晶体管的品质因数被证明是明显的。结果表明，场效应管中栅极和漏极电流噪声之间的相关性对电荷前置放大器的等效噪声电荷有重要影响。介绍了JFET、MOSFET、MESFET和HFET等几种不同技术的器件。
We present an analysis of the electronic noise contributions which limit the resolution of X- and gamma-ray spectrometers employing semiconductor detectors operating at room temperature and at signal processing times in the sub-microsecond range. The figures of merit of the front-end transistors, relevant to attain the highest resolution, are put in evidence. It is shown how the correlation between the gate and drain current noises in FETs plays a significant role in the equivalent noise charge of a charge preamplifier. Some state of the art devices, belonging to different technologies, JFET, MOSFET, MESFET and HFET, are examined.