Photoluminescence studies of strained CdTe/Cd0.633Mn0.367Te single quantum wells
Photoluminescence studies of strained CdTe/Cd0.633Mn0.367Te single quantum wells
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DOI：
10.1063/1.363589
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发表时间：
1996-11
影响因子：
3.2
通讯作者：
W. Shen;S. Shen
中科院分区：
文献类型：
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作者：
W. Shen;S. Shen
本文报道了应变CdTe/CdMnTe单量子威尔斯（SQW）的光致发光研究。发现该结构的导带偏移比Qc为0.92±0.01。详细讨论了这种量子阱中的能带填充效应。我们的实验表明，激子跃迁占主导地位的整个测量温度（20-200 K）的井。激子-纵向-光学（LO）声子耦合模型可以很好地解释线宽随温度的加宽，并提出了一种定量方法来解释量子阱中激子-纵向-光学（LO）声子耦合强度比多量子阱中强得多的实验事实。威尔斯。我们证明了量子阱辐射复合效率下降的主要机制是由于激子的热激发出的CdTe阱，其次是在CdMnTe势垒的非辐射复合。
We report the photoluminescence studies of the strained CdTe/CdMnTe single quantum wells (SQWs) with large manganese of 0.367. The conduction band‐offset ratio Qc of this structure is found to be 0.92±0.01. The band filling effect in this SQW is discussed in detail. Our experiments show that the excitonic transition dominates the whole measured temperature (20–200 K) in the well. The broadening of linewidth with temperature can be well explained by exciton‐longitudinal‐optical (LO) phonon coupling model and a quantitative approach is presented to explain the experimental fact that the strength of the exciton‐LO phonon coupling is quite stronger in SQWs than that of multiple quantum wells. We demonstrate the main mechanism of the decrease in radiative QW recombination efficiency is due to the thermal excitation of excitons out of CdTe well, followed by nonradiative recombination in the CdMnTe barriers.