X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface
X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface
复制标题
X射线CTR散射测量研究InP/GaInAs界面的形成过程
DOI：
10.1088/1742-6596/83/1/012031
复制
发表时间：
2007
期刊：
影响因子：
--
通讯作者：
and Y. Takeda
中科院分区：
文献类型：
--
作者：
M. Tabuchi;A. Mori;Y. Ohtake;and Y. Takeda
它已成功地表明，X射线CTR散射测量是一个很好的工具，研究的InP/GaInAs界面的形成过程中生长的OMVPE，即使在生长后进行测量。利用X射线CTR散射测量，讨论了InP/GaInAs界面形成过程中表面粗糙度、原子吸附和原子交换等因素的作用。As原子在GaInAs表面上的吸附被证明对界面的粗糙度有最大的贡献。
It has been successfully shown that X-ray CTR scattering measurement is a good tool to study the formation process of the InP/GaInAs interfaces grown by OMVPE even when the measurement is conducted after the growth. Using the X-ray CTR scattering measurement, the contributions of effects, ie, surface roughness, adsorption of atoms, and exchange of atoms, on the formation process of InP/GaInAs interface were able to be discussed. The adsorption of As atoms on the GaInAs surface was shown to have the largest contribution on the abruptness of the interface.
KEK 论文集 2006-3 用 X 射线和中子“埋藏”界面科学
DOI：
--
发表时间：
2006
期刊：
影响因子：
--
作者：
K.Sakurai;M.Mizusawa;M.Ishii;小松原明哲;K.Sakurai (編)
通讯作者：
K.Sakurai (編)