Al-Cr-O thin films as an efficient hydrogen barrier
Al-Cr-O thin films as an efficient hydrogen barrier
复制标题
DOI：
10.1016/j.surfcoat.2008.05.012
复制
发表时间：
2008-07
影响因子：
5.4
通讯作者：
D. Levchuk;H. Bolt;M. Döbeli;Simon Eggenberger;B. Widrig;J. Ramm
中科院分区：
文献类型：
--
作者：
D. Levchuk;H. Bolt;M. Döbeli;Simon Eggenberger;B. Widrig;J. Ramm
薄 Al-Cr-O 薄膜被提议作为氢渗透屏障。正如我们在气相渗透实验中发现的那样，在 700°C 的温度下，几微米厚的层能够将氢气渗透性抑制 2000 至 3500 倍。我们将这种优异的效率归因于致密层形态以及刚玉型结构中可能（预）形成的固溶体。这些薄膜是在基板温度为 550 °C 的批量生产系统中通过脉冲电弧蒸发沉积的。
Thin Al–Cr–O films are proposed as hydrogen permeation barriers. Layers of a few microns in thickness are able to suppress hydrogen permeability by a factor of 2000 to 3500 at temperatures of 700 °C, as has been found in our gas phase permeation experiments. We attribute this excellent efficiency to a dense layer morphology and the possible (pre)-formation of solid solutions in corundum-type structure. These films are deposited by pulsed arc evaporation in a batch-type production system at substrate temperatures of 550 °C.