Transmission electron microscopy studies on structure and defects in crystalline yttria and lanthanum oxide thin films grown on single crystal sapphire by molecular beam synthesis
Transmission electron microscopy studies on structure and defects in crystalline yttria and lanthanum oxide thin films grown on single crystal sapphire by molecular beam synthesis
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分子束合成单晶蓝宝石上生长的晶体氧化钇和氧化镧薄膜的结构和缺陷的透射电子显微镜研究
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
S. Ramanathan
中科院分区：
文献类型：
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作者：
M. Tsuchiya;N. Bojarczuk;S. Guha;S. Ramanathan
报告了在 Al2O3 (0001) 基底上生长的 Y2O3 薄膜的分子束合成和表征。 Y2O3 层在 [111] 方向上高度取向，主要取向关系为 (111) Y2O3 ‖ (0001) Al2O3 和 [110] Y2O3 ‖ [2110] Al2O3，对应于界面处约 20% 的晶格失配。在 Y2O3/Al2O3 界面处没有发现明显的界面层，并且通过在 Y2O3 层中形成堆垛层错、位错和二次取向来调节大的晶格失配。 La2O3 中间层提高了 Y2O3 薄膜的质量。 Y2O3（222）峰的半峰全宽（FWHM）从3.12°减小到1.43°，Y2O3层中的缺陷密度显着降低。这些结果可能与设计具有受控微观结构的氧化物异质层的更广泛背景相关。
The Molecular beam synthesis and characterization are reported for Y2O3 thin films grown on Al2O3 (0001) substrate. The Y2O3 layer was highly oriented in the [111] direction with predominant orientation relations (111) Y2O3 ‖ (0001) Al2O3 and [110] Y2O3 ‖ [2110] Al2O3, corresponding to a lattice mismatch of ∼20% at the interface. No significant interfacial layers were found at the Y2O3/Al2O3 interface and the large lattice misfit was accommodated by formation of stacking faults, dislocations and secondary orientation in the Y2O3 layer. A La2O3 interlayer improved the quality of the Y2O3 films. Full width at half maximum (FWHM) of the Y2O3 (222) peak decreased from 3.12° to 1.43° and the defect density in the Y2O3 layer was significantly reduced. These results may be relevant in the broader context of designing oxide heterolayers with controlled microstructures.