CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe
CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe
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CIGS 太阳能电池的 CdS 与 ZnSnO 缓冲层：使用 μ 子探针进行深度分辨分析
DOI：
10.1051/epjconf/202023305004
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发表时间：
2020
影响因子：
--
通讯作者：
Z. Salman
中科院分区：
文献类型：
--
作者：
E. Ribeiro;H. Alberto;R. Vilão;J. Gil;A. Weidinger;P. Salomé;T. Prokscha;A. Suter;Z. Salman
用注入的正介子作为探针，研究了Cu(in,Ga)Se2 （CIGS）太阳能电池材料表面缓冲层的影响。对μ子数据的深度分辨分析表明，CdS和ZnSnO都将CIGS表面缺陷层的宽度减小到原始值的一半左右。此外，CdS能够降低缺陷区域的干扰强度，这可能是由于CIGS中的表面重建。
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.