Effect of substrate temperature on the growth of ITO thin films
Effect of substrate temperature on the growth of ITO thin films
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DOI：
10.1016/j.apsusc.2005.02.115
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发表时间：
2005-12-15
影响因子：
6.7
通讯作者：
Jayaraj, MK
中科院分区：
文献类型：
--
作者：
Nisha, M;Anusha, S;Jayaraj, MK
采用射频磁控溅射法在玻璃衬底上制备了氧化铟锡（ITO）薄膜，研究了衬底温度对薄膜性能的影响。的结构特性表现出依赖于溅射过程中的氧分压。缺氧膜显示（4 0 0）平面织构，而氧掺入膜优先在[I 1 1]方向取向。在相对低的衬底温度（150摄氏度）下沉积具有2.05 × 10（-3）Ω CM的低电阻率的ITO膜，其显示出2.84 × 10（-3）平方/Ω的最高品质因数（c）2005 Elsevier B. V.保留所有权利。
Indium tin oxide (ITO) thin films were deposited onto glass substrates by rf magnetron sputtering of ITO target and the influence of substrate temperature on the properties of the films were investigated. The structural characteristics showed a dependence on the oxygen partial pressure during sputtering. Oxygen deficient films showed (4 0 0) plane texturing while oxygen-incorporated films were preferentially oriented in the [I 1 1] direction. ITO films with low resistivity of 2.05 x 10(-3) Omega CM were deposited at relatively low substrate temperature (150 degrees C) which shows highest figure of merit of 2.84 x 10(-3) square/Omega (c) 2005 Elsevier B.V. All rights reserved.