Beam alignment for scanning beam interference lithography
Beam alignment for scanning beam interference lithography
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DOI：
10.1116/1.1523402
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发表时间：
2002-12
影响因子：
1.4
通讯作者：
C. G. Chen;R. Heilmann;C. Joo;P. Konkola;G. Pati;M. Schattenburg
中科院分区：
文献类型：
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作者：
C. G. Chen;R. Heilmann;C. Joo;P. Konkola;G. Pati;M. Schattenburg
扫描光束干涉光刻(SBIL)通过干涉两束小直径的高斯激光，能够在抗蚀剂上形成线状和栅格图形，同时将它们的空间位相失真控制在纳米级。我们的工具有一个直径达300毫米的图案区。开发SBIL的动机是为半导体行业提供一套绝对计量标准，但该技术很容易适应其他重要应用，如制造高精度光学编码器。在本文中，我们描述了一种用于实现SBIL自动光束对准的系统。我们的设计目标要求严格的对准公差，其中波束位置和角度对准误差必须分别控制在∼10μm和∼10μrad。我们描述了我们的系统设置，并讨论了所谓的迭代光束对准原理，重点是推导了一个可以指导未来类似系统发展的数学公式。重复性实验表明，我们的系统满足了纳米级Sbil写入的对准要求。
By interfering two small diameter Gaussian laser beams, scanning beam interference lithography (SBIL) is capable of patterning linear gratings and grids in resist while controlling their spatial phase distortions to the nanometer level. Our tool has a patterning area that is up to 300 mm in diameter. The motive for developing SBIL is to provide the semiconductor industry with a set of absolute metrology standards, but the technology is easily adaptable to other important applications such as the making of high precision optical encoders. In this article, we describe a system for carrying out automated beam alignment for SBIL. Our design goals require tight alignment tolerances, where beam position and angle alignment errors must be controlled to ∼10 μm and ∼10 μrad, respectively. We describe our system setup, and discuss the so-called iterative beam alignment principle, focusing specifically on deriving a mathematical formalism that can guide the development of similar systems in the future. Repeatability experiments demonstrate that our system fulfills the alignment requirements for nanometer-level SBIL writing.