Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
复制标题
DOI：
10.1088/0957-4484/17/16/005
复制
发表时间：
2006-08
期刊：
影响因子：
3.5
通讯作者：
M. Tchernycheva;J. Harmand;G. Patriarche;L. Travers;G. Cirlin
中科院分区：
文献类型：
--
作者：
M. Tchernycheva;J. Harmand;G. Patriarche;L. Travers;G. Cirlin
研究了以Au颗粒为催化剂的分子束外延生长GaAs纳米线。在退火期间的生长之前，Au与来自GaAs衬底的Ga合金化并熔化。通过反射高能电子衍射（RHEED）原位观察所得颗粒的相变。确定了GaAs纳米线生长的温度范围。该区域的下限（320 °C）接近于观察到的催化剂固化温度。低于该温度，催化剂被GaAs生长掩埋。高于上限（620 °C），催化剂在表面上分离，没有显著的纳米线形成。在此区域内，通过扫描电子显微镜和透射电子显微镜详细研究了生长温度对纳米线形貌和晶体结构的影响。建立了纳米线形态与生长过程中观察到的RHEED图案的相关性。纤锌矿GaAs被认为是占主导地位的晶体结构的线。
Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 °C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 °C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires.