Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
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DOI：
10.1038/nnano.2014.308
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发表时间：
2015-02-01
影响因子：
38.3
通讯作者：
Mi, Z.
中科院分区：
文献类型：
--
作者：
Li, K. H.;Liu, X.;Mi, Z.
紫外激光辐射已被广泛应用于水净化、柔性显示器、数据存储、灭菌、诊断和生物制剂检测等领域（1-3）。然而，在开发基于光电倍增管的紧凑型紫外激光源方面的成功非常有限。在这里，我们报告说，无缺陷的无序AlGaN核壳纳米线阵列，直接在Si衬底上形成，可用于实现高度稳定，电泵浦激光器在整个紫外线AII（UV-AII）带（类似于320-340 nm）在低温下。激光阈值在每平方厘米几十安培的范围内，这比以前报道的量子阱激光器低近三个数量级（4-6）。这项工作还首次展示了在Si衬底上单片生长的电注入AlGaN基紫外激光器，并为实现紫外B（UV-B）（280-320 nm）和紫外C（UV-C）半导体激光器提供了新的途径。C）（
Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection(1-3). Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (similar to 320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers(4-6). This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (