Vapor Phase Transport of Cadmium Telluride under Controlled Partial Pressure of Constituent Element
Vapor Phase Transport of Cadmium Telluride under Controlled Partial Pressure of Constituent Element
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受控组成元素分压下碲化镉的气相传输
DOI：
10.1143/jjap.15.1429
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发表时间：
1976
期刊：
影响因子：
--
通讯作者：
K. Mochizuki
中科院分区：
文献类型：
--
作者：
K. Igaki;N. Ohashi;K. Mochizuki
通过控制碲化镉中一种组分的分压，研究了碲化镉的气相输运。在生长管的一端处的储存室用于控制碲或镉的分压。当储存室中的分压高时，传输速率受到气相中的扩散过程的限制。对于低分压，在高生长温度下，输运速率受到蒸发过程的限制。通过假设晶体表面可能发生的反应来分析输运速率。
Vapor phase transport of cadmium telluride was studied by controlling the partial pressure of one of the constituent elements. A reservoir chamber at one end of the growth tube is used to control the partial pressure of tellurium or cadmium. When the partial pressure in the reservoir chamber is high, the transport rate is limited by the diffusion process in the vapor phase. For the low partial pressure, the transport rate is limited by the vaporization process at high growth temperature. The transport rate was analysed by assuming the probable reactions on the surface of the crystal.