Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
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DOI：
10.1016/j.tsf.2009.09.152
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发表时间：
2010-02-26
期刊：
影响因子：
2.1
通讯作者：
Gauja, E.
中科院分区：
文献类型：
--
作者：
Johnson, B. C.;McCallum, J. C.;Gauja, E.
本文介绍了一种用于自旋相关输运实验的离子注入硅场效应晶体管的深能级瞬态谱（DLTS）研究方法。采用标准退火策略激活注入杂质并修复测试金属氧化物半导体（MOS）电容中的注入损伤。研究了界面陷阱电荷和少数载流子在DLTS中的作用。在950摄氏度的炉退火被发现激活的掺杂剂，但没有修复的注入损伤，有效地作为一个1000摄氏度的快速热退火没有证据的散装陷阱后，观察到这些退火的离子注入自旋相关的传输设备被证明具有预期的特性，使用在这项研究中确定的处理策略。(c)2009爱思唯尔有限公司版权所有。
A deep level transient spectroscopy (DLTS) study of defects created by low-fuence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 degrees C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 degrees C rapid thermal anneal No evidence of bulk traps was observed after either of these anneals The ion-implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study. (c) 2009 Elsevier B.V. All rights reserved.