Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition
Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition
复制标题
溶胶-凝胶沉积后水热处理低于400℃低温制备Pb(Zr0.52TiO0.48)O3薄膜
DOI：
10.1143/jjap.40.5539
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
Zhiqiang Wei;K. Yamashita;M. Okuyama
在Pt/Ti/SiO2/Si基片上，采用不同氢氧化物（KOH，Pb（OH）2和Sr（OH）2）溶液，经300°C预烘，在160° C低温下水热晶化制备了Pb（Zr0.52TiO0.48）O3（PZT）薄膜。在KOH+Pb（OH）2水热溶液中，PZT薄膜结晶性好，为纯钙钛矿结构，取向为（111）。薄膜呈颗粒状结构，晶粒尺寸约为100 nm。在400°C下后烘烤后的样品显示出良好的磁滞回线，其中Pr=26.3 µm/cm 2，Ec=40.1 kV/cm。在±66 kV/cm（±2 V）下，后烘后薄膜的漏电流密度约为5.78×10- 8A/cm 2。
Sol-gel Pb(Zr0.52TiO0.48)O3 (PZT) thin films have been successfully crystallized at the low temperature of 160°C by hydrothermal treatment in various kinds of hydroxide (KOH, Pb(OH)2 and Sr(OH)2) solutions on Pt/Ti/SiO2/Si substrates with prebaking at 300°C. Hydrothermally treated PZT films in KOH+Pb(OH)2 solution show good crystallinity with pure perovskite phase and are oriented to (111). The films show granulated structure with grain size of about 100 nm. The sample after post-baking at 400°C shows good hysteresis loop with Pr=26.3 µm/cm2 and Ec=40.1 kV/cm. The leakage current density of the thin film after postbaking is about 5.78×10-8 A/cm2 at ±66 kV/cm (±2 V).