The important challenge to extend spacer DP process towards 22nm and beyond
The important challenge to extend spacer DP process towards 22nm and beyond
复制标题
将间隔件 DP 工艺扩展到 22nm 及以上的重要挑战
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
H. Yaegashi
中科院分区：
文献类型：
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作者：
K. Oyama;E. Nishimura;M. Kushibiki;K. Hasebe;S. Nakajima;H. Murakami;A. Hara;Shohei Yamauchi;Sakurako Natori;K. Yabe;Tomohito Yamaji;R. Nakatsuji;H. Yaegashi
Double patterning processes are techniques that can be used to form etching mask patterns for 32nm node and possibly for 22nm node as well. The self-aligned spacer process has drawn much attention as an effective means of enabling the formation of repetitive patterns. The self-aligned spacer process is now being used in actual device manufacturing, but it has many process steps driving up process cost while also assuming a 1D pattern. This paper demonstrates extensions of the self-aligned spacer process by an enhanced 2D positive spacer process and a newly developed spacer DP process using a 1D negative spacer.
