Magnetic nanodot arrays patterned by selective ion etching using block copolymer templates
Magnetic nanodot arrays patterned by selective ion etching using block copolymer templates
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DOI：
10.1088/0957-4484/15/8/018
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发表时间：
2004-08
期刊：
影响因子：
3.5
通讯作者：
D. Choi;Jong-Ryul Jeong;K. Kwon;Hee‐Tae Jung;Sung-Chul Shin;Seung‐Man Yang
中科院分区：
文献类型：
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作者：
D. Choi;Jong-Ryul Jeong;K. Kwon;Hee‐Tae Jung;Sung-Chul Shin;Seung‐Man Yang
在本文中，我们报告了一种利用有序嵌段共聚物（PS-b-PMMA）薄膜的自组织球形域阵列作为模板，通过选择性离子蚀刻制造图案化磁性金属合金CoCrPt纳米点的新方法。精确控制反应离子刻蚀和Ar+离子铣削，避免刻蚀过程中的过度刻蚀和图案损失。纳米点阵列的点密度高达约10 11 点cm -2 ，磁滞回线表明使用自组装嵌段共聚物制成的孤立CoCrPt点的矫顽力明显高于连续磁性薄膜的矫顽力。本方法适用于其他磁性金属。 （本文部分图片仅电子版为彩色）
In this paper, we report a novel method of fabricating patterned magnetic metal alloy CoCrPt nanodots via selective ion etching using a self-organized array of spherical domains of an ordered block copolymer (PS-b-PMMA) film as a template. Reactive ion etching and Ar + ion milling were controlled accurately to avoid excess etching and pattern loss in the etching processes. The nanodot arrays had a dot density as high as approximately 10 11 dots cm −2 , and the magnetic hysteresis loops showed that the coercivity of the isolated CoCrPt dots made using the self-assembled block copolymer was considerably higher than that of the continuous magnetic film. The present method is applicable to other magnetic metals. (Some figures in this article are in colour only in the electronic version)