Super-gain silicon MIS heterojunction emitter transistors
Super-gain silicon MIS heterojunction emitter transistors
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DOI：
10.1109/edl.1983.25713
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发表时间：
1983-07
影响因子：
4.9
通讯作者：
M. Green;R. Godfrey
中科院分区：
文献类型：
--
作者：
M. Green;R. Godfrey
据描述，硅双极晶体管的公共发射极电流增益接近25000，被认为是迄今报道的双极器件中最高的。基于隧道金属-薄绝缘体-半导体(MIS)接触和浅注入基区的异质结发射极结构对这种改进的性能负责。这一结果的意义在于，它在发射极的注入效率和基极特性的控制方面都表现出了优势，这可能会在一系列应用中改善硅双极晶体管的性能。
Silicon bipolar transistors are described with common emitter current gains approaching 25 000, believed to be the highest ever reported for a bipolar device. A heterojunction emitter structure based on a tunneling metal-thin insulator-semiconductor (MIS) contact in conjunction with a shallow implanted base region is responsible for this improved performance. The significance of this result lies in the fact that it demonstrates advantages in both the injection efficiency of the emitter and the control of base properties which may lead to improved silicon bipolar transistor performance over a range of applications.