FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
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DOI：
10.1038/374627a0
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发表时间：
1995-04-13
期刊：
影响因子：
64.8
通讯作者：
SCOTT, JF
中科院分区：
文献类型：
--
作者：
DEARAUJO, CAP;CUCHIARO, JD;SCOTT, JF
目前，计算机存储器行业的一个重要部分涉及非易失性存储器设备（1）的制造，即在电源中断时保留信息的设备。对于这样的应用（以及易失性存储器），使用由铁电薄膜构造的电容器激发了很大的兴趣（1）。在这样的结构中，信息存储在铁电材料本身的极化状态中，这原则上应该导致更低的功率要求、更快的访问时间和潜在的更低的成本（1）。但是铁电体的使用并非没有问题;迄今为止构造的存储器通常遭受存储信息的不良保持和使用性能的退化（“疲劳”）（1-3）。在这里，我们描述了使用铁电材料的薄膜电容器的制备和表征从一个大家庭的层状钙钛矿氧化物，例如SrBi 2 Ta 2 O 9，SrBi 2NbTaO 9和SrBi 4 Ta 4 O 15。这些材料的结构灵活性允许它们的特性被定制，从而避免了与先前的铁电存储器相关联的许多问题。特别是，我们的电容器在10（12）次开关循环后没有显示出显著的疲劳，并且即使膜厚度小于100 nm，它们也表现出良好的保持特性和低漏电流。
A SIGNIFICANT fraction of the computer memory industry is at present involved in the manufacture of non-volatile memory devices(1)-that is, devices which retain information when power is interrupted. For such applications (and also for volatile memories), the use of capacitors constructed from ferroelectric thin films has stimulated much interest(1). In such structures, information is stored in the polarization state of the ferroelectric material itself, which should in principle lead to lower power requirements, faster access time and potentially lower cost(1). But the use of ferroelectrics is not without problems; the memories constructed to date have generally suffered from poor retention of stored information and degradation of performance ('fatigue') with use(1-3). Here we describe the preparation and characterization of thin-film capacitors using ferroelectric materials from a large family of layered perovskite oxides, exemplified by SrBi2Ta2O9, SrBi2NbTaO9 and SrBi4Ta4O15. The structural flexibility of these materials allows their properties to be tailored so that many of the problems associated with previous ferroelectric memories are avoided. In particular, our capacitors do not show significant fatigue after 10(12) switching cycles, and they exhibit good retention characteristics and low leakage currents even with films less than 100 nm thick.