Fabrication and characterisation of YBCO single grain boundary step edge junctions
Fabrication and characterisation of YBCO single grain boundary step edge junctions
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DOI：
10.1109/77.783971
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发表时间：
1999-06
影响因子：
1.8
通讯作者：
Catherine E. Foley;E E Mitchell-E;Simon K. H. Lam;B. Sankrithyan;Y. Wilson;D. Tilbrook;Stephen Morris
中科院分区：
文献类型：
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作者：
Catherine E. Foley;E E Mitchell-E;Simon K. H. Lam;B. Sankrithyan;Y. Wilson;D. Tilbrook;Stephen Morris
我们使用离子束蚀刻技术在 MgO 基板上制造 YBCO 阶梯边缘结 (SEJ)。以不同于法向入射的角度对基板进行氩离子束蚀刻 (IBE)，用于定义台阶高度和角度。在台阶上沉积薄 (/spl sim/300 nm) 磁控溅射 YBCO 薄膜，并使用微光刻和冷基底离子束蚀刻技术进行图案化。这些 SEJ 的临界电流 I/sub c/ 可以通过改变蚀刻到基板中的台阶角度来控制。描述了在台阶顶部产生一个晶界并包括平滑返回路径从而避免在台阶底部形成第二晶界的制造技术。在 77 K 时，电流-电压 (I-V) 特性显示电阻分流结行为。这些结通常表现出相当大的 I/sub C/R/sub N/ 乘积 (0.1-0.6 mV)，使其适合高温 SQUID 器件中的应用。
We use ion beam etching techniques to fabricate YBCO step edge junctions (SEJ) on MgO substrates. Argon ion-beam etching (IBE) of the substrate at angles other than at normal incidence is used to define the step height and angle. Thin (/spl sim/300 nm) magnetron sputtered YBCO films are deposited over the step and patterned using microlithography and cold substrate ion-beam etching techniques. The critical current, I/sub c/ of these SEJs can be controlled by varying the angle of the step etched into the substrate. Fabrication techniques are described which produce one grain boundary at the top of the step and include a smooth return path thereby avoiding a second grain boundary at the bottom of the step. At 77 K, the current-voltage (I-V) characteristics show resistively shunted junction behaviour. These junctions routinely demonstrate reasonably large I/sub C/R/sub N/ products (0.1-0.6 mV), making them suitable for applications in high temperature SQUID devices.