Potential ability of 3 T-class trapped field on MgB2 bulk surface synthesized by the infiltration-capsule method
Potential ability of 3 T-class trapped field on MgB2 bulk surface synthesized by the infiltration-capsule method
复制标题
渗透胶囊法合成MgB2块体表面3T级俘获场的势能
DOI：
10.1088/0953-2048/29/11/115003
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
A. Ogino and H. Fujishiro
中科院分区：
文献类型：
--
作者：
T. Naito;A. Ogino and H. Fujishiro
我们成功地合成了一个致密的（约90%填充）Mg B 2块体通过渗透过程中，通过克服在这个过程中的问题，如膨胀的B前驱体盘下的液体Mg渗透和使用一个特殊设计的胶囊在块体中的未反应的Mg的残留。因此，我们迄今为止已经实现了创纪录的捕获场，
We successfully synthesized a dense (∼ 90%-filled) MgB 2 bulk with no residual Mg via an infiltration process by overcoming the problems in this process such as the expansion of a B precursor disk under a liquid Mg infiltration and the residuals of unreacted Mg in the bulk using a specially designed capsule. As a result, we have achieved a record-high trapped field to date,