A magnetic atomic laminate from thin film synthesis: (Mo0.5Mn0.5)2GaC
A magnetic atomic laminate from thin film synthesis: (Mo0.5Mn0.5)2GaC
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DOI：
10.1063/1.4926611
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发表时间：
2015-07-01
期刊：
影响因子：
6.1
通讯作者：
Rosen, J.
中科院分区：
文献类型：
--
作者：
Meshkian, R.;Ingason, A. S.;Rosen, J.
本文报道了一种新的磁性原子叠层材料：（Mo_（0.5）Mn_（0.5））（2）GaC的合成和表征。在MgO（111）衬底上，在接近530 ℃的温度下合成了高质量的晶体薄膜。薄膜显示的磁响应，通过振动样品磁强计评估，在3-300 K的温度范围内，并在一个字段高达5 T。的响应范围从铁磁顺磁随温度的变化，与获得的5 T-矩和reflection矩在3 K的0.66和0.35 μ（B）每个金属原子（钼和锰），分别。剩磁矩和矫顽场（0.06 T）超过了迄今为止报道的所有值的家庭的磁性层压板的基础上，所谓的MAX阶段。(C)2015年作者。
We present synthesis and characterization of a new magnetic atomic laminate: (Mo0.5Mn0.5)(2)GaC. High quality crystalline films were synthesized on MgO(111) substrates at a temperature of similar to 530 degrees C. The films display a magnetic response, evaluated by vibrating sample magnetometry, in a temperature range 3-300 K and in a field up to 5 T. The response ranges from ferromagnetic to paramagnetic with change in temperature, with an acquired 5T-moment and remanent moment at 3 K of 0.66 and 0.35 mu(B) per metal atom (Mo and Mn), respectively. The remanent moment and the coercive field (0.06 T) exceed all values reported to date for the family of magnetic laminates based on so called MAX phases. (C) 2015 Author(s).