Control Parameters for Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration
Control Parameters for Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration
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使用场发射感应电迁移制造单电子晶体管的控制参数
DOI：
10.1166/jnn.2013.6073
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
S. Ueno and J. Shirakashi
中科院分区：
文献类型：
--
作者：
S. Akimoto;M. Ito;S. Ueno and J. Shirakashi
本文报道了一种利用场致发射诱导电迁移控制平面型金属基单电子晶体管电特性的简单方法。这种方法的优点如下：（1）通过仅使场发射电流通过纳米间隙来实现SET的制造，以及（2）可以通过在过程期间调节所施加的电流的大小来控制SET的充电能量。为了更好地控制单电子晶体管的电性能，我们研究了该方法的控制参数与单电子晶体管电性能之间的关系。当向纳米间隙施加具有500 nA的预设电流的场致发射诱导的电迁移时，纳米间隙的电流-电压特性显示出在16 K下在低偏置电压下的电流抑制，称为库仑阻塞。此外，在16 K时，库仑阻塞电压明显地受到栅电压的周期性调制，导致场致电迁移在SET中形成单岛.此外，随着预设电流的增加，SET的充电能量随着纳米间隙的初始间隙间隔的减小而减小。这些结果意味着SET的电特性可通过该方法的预设电流和纳米间隙的初始间隙分离来控制。场致发射诱导的电迁移过程使我们能够简单地控制平面型金属基SET的电特性。
We report a simple method for the control of electrical characteristics of planar-type metal-based single-electron transistors (SETs) using field-emission-induced electromigration. The advantages of this method are as follows: (1) the fabrication of SETs is achieved by only passing a field emission current through a nanogap and (2) the charging energy of SETs can be controlled by adjusting the magnitude of the applied current during the procedure. In order to better control the electrical properties of the SETs, we investigate the relation between control parameters of the method and electrical characteristics of the SETs. When the field-emission-induced electromigration with the preset current of 500 nA was applied to the nanogaps, current–voltage characteristics of the nanogaps displayed the suppression of electrical current at low-bias voltages known as Coulomb blockade at 16 K. In addition, Coulomb blockade voltage was clearly modulated by the gate voltage periodically at 16 K, resulting in the formation of single island in the SETs by the field-emissioninduced electromigration. Furthermore, as the preset current was increased, the charging energy of the SETs was decreased with decreasing the initial gap separation of the nanogaps. These results imply that the electrical characteristics of the SETs are controllable by the preset current of the method and the initial gap separation of the nanogaps. Field-emission-induced electromigration procedure allows us to simply control electrical characteristics of planar-type metal-based SETs.