Extreme ultraviolet emission from Xe clusters excited by high-intensity lasers
Extreme ultraviolet emission from Xe clusters excited by high-intensity lasers
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DOI：
10.1063/1.1396822
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发表时间：
2001-05
影响因子：
3.2
通讯作者：
M. Mori;T. Shiraishi;E. Takahashi;H. Suzuki;L. B. Sharma;E. Miura;K. Kondo
中科院分区：
文献类型：
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作者：
M. Mori;T. Shiraishi;E. Takahashi;H. Suzuki;L. B. Sharma;E. Miura;K. Kondo
研究了Xe团簇在强激光作用下产生极紫外线的特性。用干涉法对Xe团簇射流进行了很好的表征。为了获得产生强极紫外光的合适的辐照条件，用不同的激光系统拍摄了极紫外光光谱。然后，波长、脉冲宽度和泵浦能量变化很大。通过这项研究，即使在⩽5×1018 cm−3平均原子密度的较低密度Xe喷流的情况下，在假定4π光源的亚皮秒KrF激光脉冲下，也获得了最高的激光能量到极紫外光(5-18 nm)的转换效率，超过10%。这种极紫外光源由于其低的平均原子密度和较小的Xe团簇而被认为是极具吸引力的极紫外光刻光源。
The property of extreme ultraviolet (EUV) generation from Xe clusters irradiated with intense lasers was studied. The Xe cluster jet was well characterized by the interferometric method. In order to obtain the adequate irradiation condition for strong EUV generation, EUV spectra were taken with various laser systems. Then, the wavelength, the pulse width, and the pump energy were widely varied. Through this survey, even with the comparatively low-density Xe jet of ⩽5×1018 cm−3 average atomic density, the highest conversion efficiency of over 10% from laser energy to EUV (5–18 nm) was obtained with a subpicosecond KrF laser pulse, where a 4π source was assumed. This EUV source is considered to be attractive as an EUV lithography light source because of its low average atomic density and small Xe cluster.