Two-Dimensional Nonlayered CuInSe2 Nanosheets for High-Performance Photodetectors
Two-Dimensional Nonlayered CuInSe2 Nanosheets for High-Performance Photodetectors
复制标题
用于高性能光电探测器的二维非层状 CuInSe2 纳米片
DOI：
10.1021/acsanm.8b01527
复制
发表时间：
2018-10-01
影响因子：
5.9
通讯作者：
Hu, PingAn
中科院分区：
文献类型：
--
作者：
Liu, He;Yu, Miaomiao;Hu, PingAn
CuInSe2由于具有较高的光吸收系数和直接带隙结构（1.1 eV）等优越的光学性能而备受关注。在这封信中，首次展示了高光响应性能的二维（2D）非层状CuInSe2纳米片。二维CuInSe2纳米片表现出典型的p型半导体输运行为，高场效应迁移率为180 cm2 V-1 s-1。制备了基于二维CuInSe2的光电探测器，该探测器对紫外可见光谱范围（254 ~ 700 nm）具有较高的响应。计算二维CuInSe2光电探测器在700 nm光照下的光响应度和探测率分别为1900 A W-1和7 × 1011 Jones。我们的研究结果为二维非层状CuInSe2纳米片在未来光探测和光伏器件中的应用开辟了一条途径。
CuInSe2 has attracted great attention because of its superior optical properties, such as high optical absorption coefficient and direct-band-gap structure (1.1 eV). In this letter, for the first time, high-photoresponse-performance two-dimensional (2D) nonlayered CuInSe2 nanosheets were demonstrated. 2D CuInSe2 nanosheets showed typical p-type semiconducting transport behavior with a high-field-effect mobility of 180 cm2 V–1 s–1. Photodetectors based on 2D CuInSe2 were fabricated and showed a high response to the UV–visible spectral range (254–700 nm). The photoresponsivity and detectivity of 2D CuInSe2 photodetectors were calculated as 1900 A W–1 and 7 × 1011 Jones under 700 nm light illumination, respectively. Our results open a pathway for 2D nonlayered CuInSe2 nanosheet applications in future photodetection and photovoltaic devices.