Enhanced-depletion-width GaInNAs solar cells grown by molecular-beam epitaxy
Enhanced-depletion-width GaInNAs solar cells grown by molecular-beam epitaxy
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分子束外延生长的增强耗尽宽度 GaInNAs 太阳能电池
DOI：
10.1109/pvsc.2005.1488203
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
J. Kiehl
中科院分区：
文献类型：
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作者：
A. Ptak;D. Friedman;S. Kurtz;J. Kiehl
GaInNAs可能用于4结GaInP/sub 2//GaAs/GaInNAs/Ge太阳能电池，但其少数载流子收集长度非常低。迄今为止，GaInNA 太阳能电池的可用电流还不够高，无法通过添加第四个结来提高三结器件的效率。在这里，我们通过 MBE 生长 p-i-n GaInNAs 太阳能电池，具有宽的本征基层和接近 1.0 的内部 QE。如果类似的 1.0-eV GaInNAs 结可以成功集成到 3 结结构中，则所得的 4 结电池将具有更高的效率。
GaInNAs, potentially useful in a 4-junction GaInP/sub 2//GaAs/GaInNAs/Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by MBE with wide, intrinsic base layers and internal QE's near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.