Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations
Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations
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DOI：
10.1073/pnas.0807476105
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发表时间：
2008-12-02
影响因子：
11.1
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Kim, Dae-Hyeong;Song, Jizhou;Rogers, John A.
对高应变变形提供弹性机械响应的电子系统越来越受到人们的关注，因为它们能够实现新的生物医学设备和其他应用，这些设备和应用的要求不可能用传统的基于晶片的技术甚至那些提供简单弯曲的技术来满足。本文介绍了可提供极高延伸性的各类电子电路的材料和机械设计策略，使它们能够适应甚至要求苛刻的配置，如螺距较小的螺旋形螺丝(例如，90度约为1厘米)和线性拉伸到“橡皮筋”应变水平(例如，高达约140%)。在半导体中使用单晶硅纳米材料在可伸缩互补金属氧化物半导体(CMOS)集成电路中提供了接近于在硅晶片上形成的具有类似特征尺寸的传统器件的性能。对力学的全面理论研究揭示了结构设计如何使这些极端的机械性能得以实现，而不会使本质上易碎的活性材料破裂，甚至不会导致它们的电性能发生重大变化。通过对晶体管、CMOS反相器、环形振荡器和差分放大器阵列的电气测量，结果表明，这是一条通往高性能可伸缩电子产品的有价值的途径。
Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximate to 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximate to 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.