Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection
Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection
复制标题
DOI：
10.1063/1.4936932
复制
发表时间：
2015-12
影响因子：
4
通讯作者：
A. Gilbertson;H. Sadeghi;V. Panchal;O. Kazakova;C. Lambert;S. Solin;L. Cohen
中科院分区：
文献类型：
--
作者：
A. Gilbertson;H. Sadeghi;V. Panchal;O. Kazakova;C. Lambert;S. Solin;L. Cohen
本文利用扫描探针显微镜研究了室温下InSb/AlInSb微霍尔器件对局部光激发、电场和磁场的实空间电压响应。我们表明，局域光载流子的超快产生导致电导微扰类似于局域电场产生的微扰。实验结果与扩散状态下的紧密束缚输运计算结果吻合较好。在Johnson噪声极限（测量频率为> ~ 10khz）下，在10 μA偏置电流下，对2 μm宽探头的磁灵敏度、光灵敏度和电荷灵敏度进行了评估，其灵敏度分别为500 nT/√Hz；20 pW/√Hz (λ = 635 nm)，可与商用光导探测器媲美；0.05 e/√Hz，与单电子晶体管相当。这些结果表明，简单的半导体微霍尔器件具有非常通用的传感特性，可以应用于许多成像和传感应用。
We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.