Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon
Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon
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多孔硅上分子束外延 GaAs 层的生长和表征
DOI：
10.1063/1.98821
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发表时间：
1987
影响因子：
4
通讯作者：
John Liu
中科院分区：
文献类型：
--
作者：
T. Lin;L. Sadwick;Kang L. Wang;Y. Kao;R. Hull;C. Nieh;D. Jamieson;John Liu
用分子束外延技术在多孔硅衬底上生长了GaAs层。尽管PS衬底的表面不规则，没有观察到表面形貌恶化外延GaAs覆盖层。与在相同条件下生长的GaAs on Si层的16%相比，GaAs on PS层的卢瑟福背散射光谱最小沟道产率为10%，表明GaAs在PS上生长时结晶度可能有所改善。透射电子显微镜显示，GaAs-on-PS层中的主要缺陷是源自GaAs/PS界面的微孪晶和堆垛层错。发现GaAs渗透到PS层中。制备了具有良好整流特性的n-型GaAs/p-型PS异质结二极管。
GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10% Rutherford backscattering spectroscopy minimum channeling yield for GaAs‐on‐PS layers as compared to 16% for GaAs‐on‐Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs‐on‐PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n‐type GaAs/p‐type PS heterojunction diodes were fabricated with good rectifying characteristics.