Prospective and critical issues of III-V/Ge CMOS on Si platform
Prospective and critical issues of III-V/Ge CMOS on Si platform
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Si平台上III-V/Ge CMOS的前景和关键问题
DOI：
10.1149/1.3569921
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
S.Takagi and M.Takenaka
中科院分区：
文献类型：
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作者：
Tetsuya Uchimoto;Toshiyuki Takagi;Xiaodong Deng;Thomas Monnier;Joel Courbon;Thierry Douillard;Varlot Mansenelli;S.Takagi and M.Takenaka
通过异质集成实现的硅平台上的III-V/Ge CMOS有望提供从高速逻辑CMOS到多功能SoC芯片的各种应用，其中各种功能器件可以共同集成。其中，使用III-V/Ge沟道的高速/低功耗逻辑CMOS是未来规模化CMOS的有前途的器件解决方案。虽然许多关键问题已经得到了很好的认识，他们，我们提出了可能的解决方案，突破这些困难在本文中。Si基Ge/III-V MOSFET的关键问题是（1）形成具有上级界面特性的MIS栅叠层和（2）在Si衬底上形成Ge/III-V沟道层。热氧化GeO 2的Ge MOS界面具有良好的上级界面特性和高的反型层迁移率。基于Ge凝聚的SGOI/GOI结构有望成为未来的SOI/GOI MOSFET。晶圆键合技术可以是硅平台上III-V MOSFET的潜在解决方案。使用这种技术，操作的半导体/半导体盒InGaAs-OI MOSFET的演示。此外，表面氮化和表面取向工程被证明是有效的III-V MOS接口控制。最后，提出并论证了利用Ni-InGaAs合金的新型金属S/D InGaAs MOSFET。
III-V/Ge CMOS on Si platform, realized by heterogeneous integration, is expected to provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. Among them, high speed/low power logic CMOS using III-V/Ge channels are promising device solution for further progress in scaled CMOS. While many critical issues have been well recognized for them, we present possible solutions to break through these difficulties in this paper. Main critical issues of Ge/III-V MOSFETs on Si platform are (1) formation of MIS gate stacks with superior interfacial properties and (2) formation of Ge/III-V channel layers on Si substrates. Ge MOS interfaces with thermally-oxidized GeO2 are promising for the superior interface properties as well as the high inversion-layer mobility. SGOI/GOI structures based on Ge condensation are promising for future ultrathin SGOI/GOI MOSFETs. A wafer bonding technique can be potential solutions of III-V MOSFETs on Si platform. Using this technique, the operation of ultrathin body/ultrathin BOX InGaAs-OI MOSFETs are demonstrated. Also, surface nitridation and surface orientation engineering are shown to be effective in III-V MOS interface control. Finally, novel metal S/D InGaAs MOSFETs utilizing Ni-InGaAs alloys are proposed and demonstrated.